Analog Electronics When the diode is forward biased, it is equivalent to an on switch. a high resistance. None of these an off switch. an on switch. a high resistance. None of these an off switch. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics The current gain of a BJT is gm rπ gm r0 gm /rπ gm / r0 gm rπ gm r0 gm /rπ gm / r0 ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics In modern the MOSFET, the material used for the gate is high - purity silica. high - purity silicon. epitaxially grown silicon. heavily doped poly crystalline silicon. high - purity silica. high - purity silicon. epitaxially grown silicon. heavily doped poly crystalline silicon. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics In all base driver amplifiers ac emitter voltage is 180° out of phase with ac base voltage ac collector voltage is in phase with ac base voltage None of these ac collector voltage is 180° out of phase with ac base voltage ac emitter voltage is 180° out of phase with ac base voltage ac collector voltage is in phase with ac base voltage None of these ac collector voltage is 180° out of phase with ac base voltage ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics An npn BJT has gm=38mA/v, cµ =10¯14 F, cπ =10¯13F and DC current gain β0=90.For this transistor fT & fβ are fT =1.47 x 1010 Hz & fβ = 1.64 x 108 Hz fT =1.64 x 108 Hz & fβ = 1.47 x 1010 Hz fT =1.47 x 1010 Hz & fβ = 1.33 x 1012 Hz fT =1.33 x 1012 Hz & fβ = 1.47 x 1010 Hz fT =1.47 x 1010 Hz & fβ = 1.64 x 108 Hz fT =1.64 x 108 Hz & fβ = 1.47 x 1010 Hz fT =1.47 x 1010 Hz & fβ = 1.33 x 1012 Hz fT =1.33 x 1012 Hz & fβ = 1.47 x 1010 Hz ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics If the emitter resistance increases, the collector voltage stays the same. increases. breaks down the transistor. decreases. stays the same. increases. breaks down the transistor. decreases. ANSWER DOWNLOAD EXAMIANS APP
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