Analog Electronics When a junction diode is Forward Biased the thickness of the depletion region is................ Larger Smaller Medium Not determine Larger Smaller Medium Not determine ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics The leakage electric current ICBO flows in the emitter and base leads. the base and collector leads. the emitter and collector leads. the emitter, base and collector leads. the emitter and base leads. the base and collector leads. the emitter and collector leads. the emitter, base and collector leads. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics In a bipolar junction transistor the base region is made very thin so that base can be easily biased. recombination in base region is minimum. base can be easily fabricated. electric field gradient in base is high. base can be easily biased. recombination in base region is minimum. base can be easily fabricated. electric field gradient in base is high. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics The diffusion capacitance of a forward biased P+N junction diode with a steady electric current I depends on junction area. width of the depleted region. mean life time of the electrons. mean life time of the holes. junction area. width of the depleted region. mean life time of the electrons. mean life time of the holes. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics If a transistor operates at the middle of the load line, a decrease in the base resistance will move the Q point off the load line. down. nowhere. up. off the load line. down. nowhere. up. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Electron mobility is defined as Drift velocity per unit field None of these the movement of electrons Diffusion velocity per unit field Drift velocity per unit field None of these the movement of electrons Diffusion velocity per unit field ANSWER DOWNLOAD EXAMIANS APP
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