Analog Electronics What will be the Potential barrier for Si Diode ? 0.7 V 0.3 V 0.07 V 0.05 V 0.7 V 0.3 V 0.07 V 0.05 V ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Early effect in BJT refers to thermal breakdown. zener breakdown. avalanche breakdown. base narrowing. thermal breakdown. zener breakdown. avalanche breakdown. base narrowing. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Three difference Q points are shown on a load line. The upper Q point represents the intermediate current gain. cutoff point. minimum current gain. maximum current gain. intermediate current gain. cutoff point. minimum current gain. maximum current gain. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics For Germanium pn junction, the maximum value of barrier potential is 0.7V 1.5V 1.6V 0.3V 0.7V 1.5V 1.6V 0.3V ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Electron mobility is defined as the movement of electrons Drift velocity per unit field None of these Diffusion velocity per unit field the movement of electrons Drift velocity per unit field None of these Diffusion velocity per unit field ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Which are the ways to convert an alternating current into a direct current ? Half-wave rectification. All the above. Bridge Full-wave rectification. Center-Taped Full-wave rectification. Half-wave rectification. All the above. Bridge Full-wave rectification. Center-Taped Full-wave rectification. ANSWER DOWNLOAD EXAMIANS APP
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