Analog Electronics Under normal reverse bias voltage applied to diode, the reverse electric current in Si diode 1000 micro A. 100 mA. order of micro A. none of them. 1000 micro A. 100 mA. order of micro A. none of them. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics In a p⁺n junction diode under reverse bias , the magnitude of electric field is maximum at The center of the depletion region on the n-side The edge of the depletion region on the n-side The p⁺n junction The edge of the depletion region on the p-side The center of the depletion region on the n-side The edge of the depletion region on the n-side The p⁺n junction The edge of the depletion region on the p-side ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics The collector characteristics of a common - emitter connected transistor may be used to find its base current. output resistance . input resistance. voltage gain. base current. output resistance . input resistance. voltage gain. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics The emitter of the transistor is doped moderately. none of these lightly. heavily. moderately. none of these lightly. heavily. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics The transition capacitance of a reverse biased pn junction having uniform doping on both sides, varies with junction voltage ( VB ) as 1 / VB. VB. ( VB )2. ( VB )- 1 / 2. 1 / VB. VB. ( VB )2. ( VB )- 1 / 2. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics What is the range of energy band gap of semiconductors ? 14-15 ev 10-15 ev 1-3 ev 0 ev 14-15 ev 10-15 ev 1-3 ev 0 ev ANSWER DOWNLOAD EXAMIANS APP
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