Analog Electronics Thermal runaway is not possible in FET because as the temperature of FET increases None of these The transconductance increases The drain current increases The mobility decreases None of these The transconductance increases The drain current increases The mobility decreases ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics A silicon pn junction in forward condition has a voltage drop closer to 2.1 V. 0.7 V. 0.1 V. 1.7 V. 2.1 V. 0.7 V. 0.1 V. 1.7 V. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics The leakage electric current of a pn junction is caused by heat energy. chemical energy. majority carriers. barrier potential. heat energy. chemical energy. majority carriers. barrier potential. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics When the pn junction is forward biased the sequence of events that take place are injection, diffusion and recombination. diffusion, injection and drift. diffusion, drift and recombination. none of above. injection, diffusion and recombination. diffusion, injection and drift. diffusion, drift and recombination. none of above. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Three identical amplifiers with each one having a voltage gain of 50,input resistance of 1KΩ & output resistance of 250, are cascaded. The open circuit voltage gain of combined amplifier is 102dB 98dB 49dB 51dB 102dB 98dB 49dB 51dB ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics A depletion MOSFET differs from a JFET in the sense that it has no gate. substrate. p - n junction. channel. gate. substrate. p - n junction. channel. ANSWER DOWNLOAD EXAMIANS APP
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