Analog Electronics Thermal runaway is not possible in FET because as the temperature of FET increases The transconductance increases None of these The drain current increases The mobility decreases The transconductance increases None of these The drain current increases The mobility decreases ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics What will be the Potential barrier for Si Diode ? 0.7 V 0.07 V 0.05 V 0.3 V 0.7 V 0.07 V 0.05 V 0.3 V ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics The room temperature resistivity of pure silicon is 50 6 300 3000 50 6 300 3000 ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics The ICBO is the electric current that flows when some DC voltage is applied in the reverse direction to the collector junction with emitter open. in the forward direction to the collector junction with emitter open. in the reverse direction to the emitter junction with collector open. in the forward direction to the emitter junction with collector open. in the reverse direction to the collector junction with emitter open. in the forward direction to the collector junction with emitter open. in the reverse direction to the emitter junction with collector open. in the forward direction to the emitter junction with collector open. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics In an NPN transistor, the majority carriers in the emitter are free electrons. holes. both. neither. free electrons. holes. both. neither. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics If temperature increases then conductivity of a semiconductor is ................... Constant None of these Decreases Increases Constant None of these Decreases Increases ANSWER DOWNLOAD EXAMIANS APP
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