Analog Electronics Thermal runaway is not possible in FET because as the temperature of FET increases The drain current increases The transconductance increases The mobility decreases None of these The drain current increases The transconductance increases The mobility decreases None of these ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics When were the first solid state devices manufactured ? 1940 1960 1970 1950 1940 1960 1970 1950 ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics The amount of time between the creation and disappearance of a free electrons is called drift velocity life time of the carriers bound electrons recombination drift velocity life time of the carriers bound electrons recombination ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics In a N-type semiconductor material holes are ...................... High charge carriers Majority charge carriers Low charge carriers Minority charge carriers High charge carriers Majority charge carriers Low charge carriers Minority charge carriers ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Which of following is the point of reference JFET? Gate. None of above. Source. Drain. Gate. None of above. Source. Drain. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics The ideal value of stability factor of a biasing circuit is 100. 5. 10. 1. 100. 5. 10. 1. ANSWER DOWNLOAD EXAMIANS APP
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