Analog Electronics The effective channel length of a MOSFET in a saturation decreases with increase in Source voltage Body voltage Gate voltage Drain voltage Source voltage Body voltage Gate voltage Drain voltage ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics The current gain of a pnp transistor is the collector current divided by the emitter current. the ratio of collector current to emitter current. near zero. the negative of the npn current gain. the collector current divided by the emitter current. the ratio of collector current to emitter current. near zero. the negative of the npn current gain. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Depletion region of a p-n junction is formed During Heating During Reverse bias During Forward bias During Manufacturing During Heating During Reverse bias During Forward bias During Manufacturing ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics An npn BJT has gm=38mA/v, cµ =10¯14 F, cπ =10¯13F and DC current gain β0=90.For this transistor fT & fβ are fT =1.47 x 1010 Hz & fβ = 1.33 x 1012 Hz fT =1.64 x 108 Hz & fβ = 1.47 x 1010 Hz fT =1.33 x 1012 Hz & fβ = 1.47 x 1010 Hz fT =1.47 x 1010 Hz & fβ = 1.64 x 108 Hz fT =1.47 x 1010 Hz & fβ = 1.33 x 1012 Hz fT =1.64 x 108 Hz & fβ = 1.47 x 1010 Hz fT =1.33 x 1012 Hz & fβ = 1.47 x 1010 Hz fT =1.47 x 1010 Hz & fβ = 1.64 x 108 Hz ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics What will be the Potential barrier for Si Diode ? 0.3 V 0.07 V 0.05 V 0.7 V 0.3 V 0.07 V 0.05 V 0.7 V ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics The encapsulation of transistor is necessary for Preventing photo-emission effects Mechanical ruggedness Preventing radio interference Avoiding loss of free electrons Preventing photo-emission effects Mechanical ruggedness Preventing radio interference Avoiding loss of free electrons ANSWER DOWNLOAD EXAMIANS APP
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