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Analog Electronics

Analog Electronics
The barrier potential across each silicon depletion layer is

 0 V.
  0.7 V.
 0.3 V.
 1 V.

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Analog Electronics
In which mode of BJT operation are both junction forward biased

  active.
  reverse active.
  saturation.
  cut off.

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Analog Electronics
The conduction loss verses device current characteristics of power MOSFET in best approximately by

 a parabola.
 a rectangular hyperbola.
 an exponentially decaying function.
 a straight line.

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Analog Electronics
Early effect in BJT refers to

  avalanche breakdown.
  base narrowing.
  thermal breakdown.
  zener breakdown.

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Analog Electronics
Energy gap of semiconductor is approx

 5 - 8 eV.
 > 8 eV .
 1 eV.
 0 eV.

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Analog Electronics
The input offset electric current equals the

 average of the two base currents.
 difference between the two base-emitter voltages.
 difference between the two base currents.
 collector electric current divided by the base current.

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