Analog Electronics The barrier potential across each silicon depletion layer is 0 V. 1 V. 0.7 V. 0.3 V. 0 V. 1 V. 0.7 V. 0.3 V. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics In modern the MOSFET, the material used for the gate is high - purity silica. epitaxially grown silicon. high - purity silicon. heavily doped poly crystalline silicon. high - purity silica. epitaxially grown silicon. high - purity silicon. heavily doped poly crystalline silicon. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics The Barkhausen criterion for an oscillator Both A and C Loop gain should be less than unity Loop gain should be unity The phase of a feedback signal with respect to input should be 0° or 360° Both A and C Loop gain should be less than unity Loop gain should be unity The phase of a feedback signal with respect to input should be 0° or 360° ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics The magnitude of electric current ICBO depends largely upon the emitter doping. increases with the increase in temperature. depends largely upon emitter-base junction base potential. is generally greater in silicon than in germanium transistor. depends largely upon the emitter doping. increases with the increase in temperature. depends largely upon emitter-base junction base potential. is generally greater in silicon than in germanium transistor. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics The arrow direction in diode symbol indicates none of these. direction of hole flow. opposite to the direction of hole flow. direction of electron flow. none of these. direction of hole flow. opposite to the direction of hole flow. direction of electron flow. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Electron mobility is defined as None of these Diffusion velocity per unit field Drift velocity per unit field the movement of electrons None of these Diffusion velocity per unit field Drift velocity per unit field the movement of electrons ANSWER DOWNLOAD EXAMIANS APP
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