Analog Electronics The barrier potential across each silicon depletion layer is 1 V. 0 V. 0.7 V. 0.3 V. 1 V. 0 V. 0.7 V. 0.3 V. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics In the active region, the collector current is not changed significantly by current gain. collector resistance. base supply voltage. base current. current gain. collector resistance. base supply voltage. base current. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics What will be the result if pentavalent impurity is added to pure germanium or silicon ? N-type semiconductor P-type semiconductor Intrinsic semiconductor None of these N-type semiconductor P-type semiconductor Intrinsic semiconductor None of these ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Reverse recovery current in a diode depends upon Temperature. Storage change. Forward field current. PIV. Temperature. Storage change. Forward field current. PIV. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics The magnitude of electric current ICBO depends largely upon emitter-base junction base potential. is generally greater in silicon than in germanium transistor. depends largely upon the emitter doping. increases with the increase in temperature. depends largely upon emitter-base junction base potential. is generally greater in silicon than in germanium transistor. depends largely upon the emitter doping. increases with the increase in temperature. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics If the current gain is 100 and the collector current is 10 mA, the base current is 100 µA. 1 A. 10 µA. 10 A. 100 µA. 1 A. 10 µA. 10 A. ANSWER DOWNLOAD EXAMIANS APP
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