Analog Electronics The barrier potential across each silicon depletion layer is 0.3 V. 0.7 V. 0 V. 1 V. 0.3 V. 0.7 V. 0 V. 1 V. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics An npn BJT has gm=38mA/v, cµ =10¯14 F, cπ =10¯13F and DC current gain β0=90.For this transistor fT & fβ are fT =1.47 x 1010 Hz & fβ = 1.64 x 108 Hz fT =1.47 x 1010 Hz & fβ = 1.33 x 1012 Hz fT =1.33 x 1012 Hz & fβ = 1.47 x 1010 Hz fT =1.64 x 108 Hz & fβ = 1.47 x 1010 Hz fT =1.47 x 1010 Hz & fβ = 1.64 x 108 Hz fT =1.47 x 1010 Hz & fβ = 1.33 x 1012 Hz fT =1.33 x 1012 Hz & fβ = 1.47 x 1010 Hz fT =1.64 x 108 Hz & fβ = 1.47 x 1010 Hz ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics A common - mode signal is applied to the non - inverting input. the top of the tail resistor. the inverting input. both inputs. the non - inverting input. the top of the tail resistor. the inverting input. both inputs. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Which is the conversion of current done by diode ? None of these DC to AC DC to DC AC to DC None of these DC to AC DC to DC AC to DC ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics The softness factor for soft recovery and fast recovery diodes are respectively 1, 1, >1. 1, 1. 1, 1, >1. 1, 1. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics In a properly biased NPN transistor most of the electrons from the emitter recombine in the emitter its self. pass through the base to the collector. recombine with holes in the base . are stopped by the junction barrier. recombine in the emitter its self. pass through the base to the collector. recombine with holes in the base . are stopped by the junction barrier. ANSWER DOWNLOAD EXAMIANS APP
EXAMIANS