Analog Electronics The barrier potential across each silicon depletion layer is 0.7 V. 0.3 V. 1 V. 0 V. 0.7 V. 0.3 V. 1 V. 0 V. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics The leakage electric current ICBO flows in the emitter, base and collector leads. the base and collector leads. the emitter and collector leads. the emitter and base leads. the emitter, base and collector leads. the base and collector leads. the emitter and collector leads. the emitter and base leads. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics The amount of time between the creation and disappearance of a free electrons is called bound electrons drift velocity recombination life time of the carriers bound electrons drift velocity recombination life time of the carriers ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Which impurity is added into semiconductor to increase its conductivity ? None of these extrinsic doping intrinsic None of these extrinsic doping intrinsic ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Which oscillators are easy to fabricate in a monolithic IC? Crystal oscillator. Relaxation oscillator. Wien bridge oscillator. Hartley oscillator. Crystal oscillator. Relaxation oscillator. Wien bridge oscillator. Hartley oscillator. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics In a properly biased NPN transistor most of the electrons from the emitter are stopped by the junction barrier. pass through the base to the collector. recombine in the emitter its self. recombine with holes in the base . are stopped by the junction barrier. pass through the base to the collector. recombine in the emitter its self. recombine with holes in the base . ANSWER DOWNLOAD EXAMIANS APP
EXAMIANS