Analog Electronics Secondary breakdown occures in BJT but not is MOSFET. Both BJT and MOSFET. MOSFET but not in BJT. None of these. BJT but not is MOSFET. Both BJT and MOSFET. MOSFET but not in BJT. None of these. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics What will be the result if pentavalent impurity is added to pure germanium or silicon ? N-type semiconductor None of these Intrinsic semiconductor P-type semiconductor N-type semiconductor None of these Intrinsic semiconductor P-type semiconductor ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Electron mobility is defined as Drift velocity per unit field Diffusion velocity per unit field the movement of electrons None of these Drift velocity per unit field Diffusion velocity per unit field the movement of electrons None of these ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Ignoring the bulk resistance of the collector diode, the collector-emitter saturation voltage is 1 V. a few tenths of a volt. 0. supply voltage. 1 V. a few tenths of a volt. 0. supply voltage. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics In an E only MOSFET, drain electric current starts only when VGS (th) is positive. greater than VGS (th). negative. zero. positive. greater than VGS (th). negative. zero. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics For a reverse biased pn junction, the electric current through the junction increases abruptly at 0.2 eV. 7.2 eV. 0 V. breakdown voltage. 0.2 eV. 7.2 eV. 0 V. breakdown voltage. ANSWER DOWNLOAD EXAMIANS APP
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