Analog Electronics In a MOSFET, the polarity of the inversion layer is the same as that of the charge on the gate electrode. majority carries in the substrate. minority carriers in the drain . majority carries in the source . charge on the gate electrode. majority carries in the substrate. minority carriers in the drain . majority carries in the source . ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics The base - emitter voltage is usually none of these. less than the base supply voltage. equal to the base supply voltage. more than the base supply voltage. none of these. less than the base supply voltage. equal to the base supply voltage. more than the base supply voltage. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics An n- channel JFET has IDSS=2mA,and Vp=-4v.Its transconductance gm=in mA/V)for an applied gate to source voltage VGS=-2v is 0.75 0.25 1 0.5 0.75 0.25 1 0.5 ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Electron mobility is defined as the movement of electrons Diffusion velocity per unit field Drift velocity per unit field None of these the movement of electrons Diffusion velocity per unit field Drift velocity per unit field None of these ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics For Germanium pn junction, the maximum value of barrier potential is 0.3V 1.6V 1.5V 0.7V 0.3V 1.6V 1.5V 0.7V ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics The emitter of the transistor is generally doped the heaviest because it must possess low resistance. is the first region of transistor. has to supply the charge carriers. has to dissipate maximum power. must possess low resistance. is the first region of transistor. has to supply the charge carriers. has to dissipate maximum power. ANSWER DOWNLOAD EXAMIANS APP
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