Power Electronics IGBT combines the advantages of BJTs and MOSFETs. SITs and MOSFETs. None of these. BJTs and SITs. BJTs and MOSFETs. SITs and MOSFETs. None of these. BJTs and SITs. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics The typical time of rising time lies between 90 - 100 µs. 1 - 4 µs. 40 - 60 µs. 10 - 20 µs. 90 - 100 µs. 1 - 4 µs. 40 - 60 µs. 10 - 20 µs. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics An SCR has half cycle surge current rating of 3000 A for 50 Hz supply. One cycle surge current will be 1500 A. 4242.64 A. 6000 A. 2121.32 A. 1500 A. 4242.64 A. 6000 A. 2121.32 A. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics To meet high current demand we use SCRs in parallel connection. series connection. anti parallel connection. both B and C. parallel connection. series connection. anti parallel connection. both B and C. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A modern power semiconductor device that combines the characteristic of BJT and MOSFET is GTO. FCT. IGBT. MCT. GTO. FCT. IGBT. MCT. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics In a P1N1P2N2 thyristor which layer is less doped ? P1. P2. N1. N2. P1. P2. N1. N2. ANSWER DOWNLOAD EXAMIANS APP
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