Analog Electronics For emitter bias, the voltage at the emitter is 0.7 V less than the base voltage. emitter voltage. ground voltage. collector voltage. base voltage. emitter voltage. ground voltage. collector voltage. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics What will be the result if pentavalent impurity is added to pure germanium or silicon ? None of these Intrinsic semiconductor N-type semiconductor P-type semiconductor None of these Intrinsic semiconductor N-type semiconductor P-type semiconductor ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics In a JFET, the primary control on drain electric current is exerted by size of depletion regions. gate reverse bias. channel resistance. voltage drop across channel. size of depletion regions. gate reverse bias. channel resistance. voltage drop across channel. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics When the JFET is no longer able to control the current, this point is called the saturated point. depletion region. breakdown region. pinch-off region. saturated point. depletion region. breakdown region. pinch-off region. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics A schottky device is a Majority carrier device. Minority carrier device. Both B and C. Fast recovery device. Majority carrier device. Minority carrier device. Both B and C. Fast recovery device. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Common emitter current gain hFE of a BJT is Dependent on collector-emitter voltage. Dependent on base -emitter voltage. Always constant. Dependent on collector current. Dependent on collector-emitter voltage. Dependent on base -emitter voltage. Always constant. Dependent on collector current. ANSWER DOWNLOAD EXAMIANS APP
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