A leakage capacitor can be represented by a capacitance C and resistance R in parallel C.

Materials and Components
A leakage capacitor can be represented by a capacitance C and resistance R in parallel C.

True

False

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Materials and Components
In an intrinsic semiconductor, at a given temperature T

The number of electron hole pairs generated per second due to thermal motion is always more than the number of electron-hole pairs lost per second due to recombination

Any of the above

The number of electron-hole pairs generated per second due to thermal motion is always less than the number of electron-hole pairs lost per second due to recombination

The number of electrons-hole pairs generated per second due to thermal motion are equal to the number of electron-hole pairs lost per second due to recombination

The number of electron hole pairs generated per second due to thermal motion is always more than the number of electron-hole pairs lost per second due to recombination

Any of the above

The number of electron-hole pairs generated per second due to thermal motion is always less than the number of electron-hole pairs lost per second due to recombination

The number of electrons-hole pairs generated per second due to thermal motion are equal to the number of electron-hole pairs lost per second due to recombination

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Materials and Components
Piezoelectricity means the slight change in dimensions of a specimen when an electric field is applied.

False

True

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Materials and Components
The residual resistivity of a binary alloy at 0 K is

Difference of residual resistivities of component metals

Dependent on the concentration of minor component in the alloy

Product of residual resistivities of component metals

Sum of residual resistivities of component metals

Difference of residual resistivities of component metals

Dependent on the concentration of minor component in the alloy

Product of residual resistivities of component metals

Sum of residual resistivities of component metals

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Materials and Components
In van der walls crystals, there exists a high degree of stability of the outer electron shell.

True

False

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Materials and Components
The unit for mmf is

Wb

A

T

V

Wb

A

T

V

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Materials and Components

Materials and Components A leakage capacitor can be represented by a capacitance C and resistance R in parallel C.

Materials and Components In an intrinsic semiconductor, at a given temperature T

Materials and Components Piezoelectricity means the slight change in dimensions of a specimen when an electric field is applied.

Materials and Components The residual resistivity of a binary alloy at 0 K is

Materials and Components In van der walls crystals, there exists a high degree of stability of the outer electron shell.

Materials and Components The unit for mmf is

Materials and Components
A leakage capacitor can be represented by a capacitance C and resistance R in parallel C.

Materials and Components
In an intrinsic semiconductor, at a given temperature T

Materials and Components
Piezoelectricity means the slight change in dimensions of a specimen when an electric field is applied.

Materials and Components
The residual resistivity of a binary alloy at 0 K is

Materials and Components
In van der walls crystals, there exists a high degree of stability of the outer electron shell.

Materials and Components
The unit for mmf is